MMBD4448HT_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Switching Diode

MMBD4448HT /HTA /HTC /HTS
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
80
V
V_R
RMS Reverse Voltage
V_R(RMS)
57
V
Forward Continuous Current (Note 5)
I_FM
500
mA
Average Rectified Output Current (Note 5)
I_O
250
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
I_FSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V_(BR)R
V_F
Min
80
0.62
⎯
⎯
⎯
I_R
⎯
C_T
⎯
t_rr
⎯
Max
⎯
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
μA
μA
nA
pF
ns
Test Condition
I_R = 2.5μA
I_F = 5.0mA
I_F = 10mA
I_F = 100mA
I_F = 150mA
V_R = 70V
V_R = 75V, T_J = 150°C
V_R = 25V, T_J = 150°C
V_R = 20V
V_R = 6V, f = 1.0MHz
V_R = 6V, I_F = 5mA
Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
250
1,000
200
100
150
10
100
50
1
0
0
40
80
120
160
200
T_A, AMBIENT TEMPERATURE (° C)
Fig. 1 Power Derating Curve, Total Package (Note 5)
0.1
0
0.4
0.8
1.2
1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
MMBD4448HT /HTA /HTC /HTS
Document number: DS30263 Rev. 13 - 2
2 of 4
www.diodes.com
February 2011
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