MMBD4448HCQW_0712 Datasheet, PDF (2/4 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE ARRAY

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Symbol
V_(BR)R
V_F
Min
80
0.62
⎯
⎯
⎯
Reverse Current (Note 5)
I_R
⎯
Total Capacitance
Reverse Recovery Time
C_T
⎯
t_rr
⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Max
⎯
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Unit
V
V
nA
μA
μA
nA
pF
ns
Test Condition
I_R = 100μA
I_F = 5.0mA
I_F = 10mA
I_F = 100mA
I_F = 150mA
V_R = 70V
V_R = 75V, T_j = 150°C
V_R = 25V, T_j = 150°C
V_R = 20V
V_R = 6V, f = 1.0MHz
V_R = 6V, I_F = 5mA
1,000
100
10
10,000
1,000
100
10
T_A = 125ºC
T_A = 75ºC
T_A = 25ºC
1
0.1
0
0.4
0.8
1.2
1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
3
1
0.1
0
250
T_A = 0ºC
T_A = -40ºC
20
40
60
80
100
V_R, REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
2.5
2
1.5
1
0.5
0
0
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance vs. Reverse Voltage
200
150
100
50
0
0
40
80
120
160
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve, Total Package
MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Document number: DS30153 Rev. 16 - 2
2 of 4
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December 2007
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