MMBD4448DW_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode Array

MMBD4448DW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
75
V
V_R
RMS Reverse Voltage
V_R(RMS)
53
V
Forward Continuous Current (Note 5)
I_FM
500
mA
Average Rectified Output Current (Note 5)
I_O
250
mA
Non-Repetitive Peak Forward Surge Current
@ t < 1μs
@ t < 1s
I_FSM
4
1
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V_(BR)R
V_F
I_R
C_T
t_rr
Min
Max
Unit
Test Condition
75
⎯
V
I_R = 10μA
0.62
0.720
⎯
0.855
⎯
1.0
⎯
1.25
I_F = 5.0mA
V
I_F = 10mA
I_F = 50mA
I_F = 150mA
2.5
μA ^VR ^{= 75V}
⎯
50
30
μA VR = 75V, TJ = 150°C
μA V_R = 25V, T_J = 150°C
25
nA _{VR = 20V}
⎯
4.0
pF V_R = 0, f = 1.0MHz
⎯
4.0
ns
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating.
250
1,000
200
100
150
10
100
1
50
0
0
40
80
120
160 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package (Note 5)
0.1
0
0.4
0.8
1.2
1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
MMBD4448DW
Document number: DS31035 Rev. 12 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated