MMBD4148TW_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode Array

MMBD4148TW / BAS16TW
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
51)
Average Rectified Output Current
51)
Non-Repetitive Peak Forward Surge Current
(Note
(Note
@ t = 1.0µs
@ t = 1.0s
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
P_D
R_θJA
T_J , T_STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol Min
(Note 6) V_(BR)R
75
V_F
⎯
(Note 6) I_R
⎯
C_T
⎯
t_rr
⎯
Max
⎯
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
µA
µA
µA
nA
pF
ns
Test Condition
I_R = 1µA
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 75V, T_J = +150°C
V_R = 25V, T_J = +150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
MMBD4148TW / BAS16TW
Document number: DS30154 Rev. 14 - 2
2 of 4
www.diodes.com
December 2013
© Diodes Incorporated