MJD31CQ_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Absolute Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
100
100
6
3
5
1
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
3.9
2.1
1.6
15
32
59
80
8.4
-55 to +150
MJD31CQ
Unit
V
V
V
A
A
A
Unit
W
C/W
C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD31CQ
Document number: DS37049 Rev. 1 - 2
2 of 7
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March 2014
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