HBDM60V600W Datasheet, PDF (2/8 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER

Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
PNP (MMBT2907A) Transistor (Q1):
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
Symbol
Min
V(BR)CBO
V_(BR)CEO
V(BR)EBO
I_CBO
ICEX
I_BL
-60
-60
-5.5
¾
¾
¾
DC Current Gain
100
100
h_FE
100
100
50
Collector-Emitter Saturation Voltage
V_CE(SAT)
¾
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
V_BE(SAT)
¾
f_T
100
ton
¾
t_d
¾
tr
¾
t_off
¾
ts
¾
t_r
¾
Max Unit
Test Condition
¾
V IC = -10mA, IE = 0
¾
V IC = -10mA, IB = 0
¾
V IE = -10mA, IC = 0
-10
nA VCB = -50V, IE = 0
-50
nA VCE = -30V, VEB(OFF) = -0.5V
-50
nA VCE = -30V, VEB(OFF) = -0.5V
¾
¾
¾
300
¾
-0.3
-0.5
-0.95
-01.3
¾ _{IC = -100mA, VCE = -10V}
¾ I_C = -1.0mA, V_CE = -10V
¾ IC = -10mA, VCE = -10V
¾ ^IC ^{= -150mA, V}CE ^{= -10V}
¾ ^{IC = -500mA, VCE = -10V}
V
I_C = -150mA, I_B = -15mA
IC = -500mA, IB = -50mA
V
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
¾
MHz
V_CE = 2.0V, I_C = 10mA,
f = 100MHz
45
ns
¾
10
ns _{VCE = -30V, IC = -150mA,}
40
ns ^{IB1 = IB2 = -15mA}
100
ns
¾
80
ns _{VCC = -6.0V, IC = -150mA,}
30
ns ^{IB1 = IB2 = -15mA}
Electrical Characteristics
@ T_A = 25°C unless otherwise specified
NPN (MMBTA06) Transistor (Q2):
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Collector-Emitter Cutoff Current, I_O(OFF)
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
80
V_(BR)CEO
65
V_(BR)EBO
6
I_CBO
¾
I_CES
¾
ICEO
¾
I_EBO
¾
250
h_FE
100
V_CE(SAT)
¾
VBE(ON)
0.7
V_BE(SAT)
¾
Typ
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.2
0.75
¾
Max
¾
¾
¾
100
100
100
100
¾
¾
0.4
0.8
0.95
f_T
100
¾
¾
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V
I_C = 100mA, I_E = 0
V
I_C = 1mA, I_B = 0
V
I_E = 100mA, I_C = 0
nA
V_CB = 80V, I_E = 0
nA
VCE = 90V, VBE = 0
nA
V_CE = 30V, I_B = 0
nA
V_EB = 5V, I_C = 0
¾
VCE = 1V, IC = 10mA
¾
V_CE = 1V, I_C = 100mA
V
I_C = 100mA, I_B = 10mA
V
V_CE = 1V, I_C = 100mA
V
I_C = 100mA, I_B = 5mA
MHz
V_CE = 20V, I_C = 10mA,
f = 100MHz
DS30701 Rev. 2 - 2
2 of 8
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HBDM60V600W