FZT968_15 Datasheet, PDF (2/2 Pages) Diodes Incorporated – SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR

FZT968
0.8
+25 °C
0.6
0.4
0.2
TYPICAL CHARACTERISTICS
0.8
I+/I*=50
0.6
I+/I*=250
I+/I*=200
I+/I*=100
0.4
I+/I*=50
I+/I*=10
0.2
+100 °C
+25 °C
-55 °C
0
1m 10m 100m
1
10
100
IC - Collector Current (A)
VCE(sat) v IC
800
V+-=1V
+100 °C
600
+25 °C
400
-55 °C
200
0
1m 10m 100m
1
10
100
IC - Collector Current (A)
hFE v IC
1.4
V+-=1V
-55 °C
+25 °C
+100 °C
0.7
0
1m 10m 100m
1
10
100
IC - Collector Current (A)
VBE(on) v IC
0
1m 10m 100m
1
10
100
IC - Collector Current (A)
VCE(sat) v IC
1.6 ^I+/I*=50
-55 °C
1.2
+25 °C
+100 °C
0.8
0.4
0
1m
10m 100m
1
10
100
IC - Collector Current (A)
VBE(sat) v IC
100
10
DC
1
1s
100ms
10ms
1ms
100µs
0.1
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 295