 English |
|
|
|
|
|
|
|
| FZT851 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |||
| |||
| ◁ |
FZT851
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 150 220
Voltage
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER 150
220
V
IC=1µA, RB â¤1kâ¦
Collector-Emitter
Breakdown Voltage
V(BR)CEO 60
85
V
IC=10mA*
Emitter-Base Breakdown
V(BR)EBO 6
8
Voltage
V
IE=100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICER
R â¤1kâ¦
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
50
nA
1
µA
50
nA
1
µA
10
nA
50
mV
100 mV
170 mV
375 mV
1200 mV
VCB=120V
VCB=120V,
Tamb=100°C
VCB=120V
VCB=120V,
Tamb=100°C
VEB=6V
IC=0.1A, IB=5mA*
IC=1A, IB=50mA*
IC=2A, IB=50mA*
IC=6A, IB=300mA*
IC=6A, IB=300mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1150 mV IC=6A, VCE=1V*
Static Forward
Current Transfer
Ratio
Transition
Frequency
hFE
100 200
100 200 300
75
120
25
50
IC=10mA, VCE=1V
IC=2A, VCE=1V*
IC=5A, VCE=1V*
IC=10A, VCE=1V*
fT
130
MHz IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
45
pF
Switching Times
ton
toff
45
ns
1100
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=10V, f=1MHz
IC=1A, IB1=100mA
IB2=100mA, VCC=10V
3 - 261
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese