FMMTL718_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
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Diodes Incorporated
FMMTL718
Value
Unit
-20
V
-20
V
-5
V
-1
A
-2
A
-200
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 4)
(Note 5)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 6)
Symbol
Min
BV_CBO
-20
BV_CEO
-20
BV_EBO
-5
I_CBO
I_EBO
I_CES
300
300
h_FE
200
120
50
Collector-Emitter Saturation Voltage
(Note 6)
V_CE(sat)
Base-Emitter Turn-On Voltage(Note 6)
Base-Emitter Saturation Voltage(Note 6)
Equivalent On-Resistance
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
V_BE(on)
V_BE(sat)
R_CE(sat)
C_obo
f_T
t_on
t_off
Typ
-65
-55
-8.8
500
450
320
200
80
-33
-130
-230
-315
-0.85
-0.95
210
9
265
108
121
Note:
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
Max
-10
-10
-10
-50
-180
-320
-450
-1.0
-1.1
12
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
mΩ
pF
MHz
ns
ns
Test Condition
I_C = -100 µA
I_C = -10 mA
I_E = -100 µA
V_CB = -15V
V_EB = -4V
V_CE= -15V
I_C = -10mA, V_CE = -2V
I_C = -100mA, V_CE = -2V
I_C = -0.5A, V_CE = -2V
I_C = -1A, V_CE = -2V
I_C = -1.5A, V_CE = -2V
I_C =- 100mA, I_B = -10mA
I_C =- 500mA, I_B = -20mA
I_C = -1A, I_B = -50mA
I_C = -1.5A, I_B = -100mA
I_C = -1.25A, V_CE = -2V
I_C = -1.25A, I_B = -100mA
I_C = -1.5A
V_CB = -10V, f = 1MHz
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CC=-10V, I_C =-1A
I_B1 = I_B2 = -10mA
FMMTL718
Document Number: DS33132 Rev. 2 - 2
2 of 5
www.diodes.com
June 2011
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