FMMT717_12 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT717
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
-12
-12
-7
-2.5
-10
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJL
T_J, T_STG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
≥ 8,000
≥ 400
Unit JEDEC Class
V
3B
V
C
Notes:
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note 6, except the device is measured at t ≤ 5 sec.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT717
Document Number: DS33116 Rev. 5 - 2
2 of 7
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October 2012
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