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| FMMT717 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – SILICON POWER (SWITCHING) TRANSISTORS | |||
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FMMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12 -35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12 -25
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.5
V
IE=-100µA
Collector Cut-Off
ICBO
Current
-100 nA VCB=-10V
Emitter Cut-Off Current IEBO
Collector Emitter
ICES
Cut-Off Current
-100 nA
-100 nA
VEB=-4V
VC ES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-10 -17 mV
-100 -140 mV
-110 -170 mV
-180 -220 mV
-0.9 -1.0 V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-50mA*
IC=-2.5A, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-0.8 -1.0 V
IC=-2.5A, VCE=-2V*
Static Forward Current hFE
Transfer
Ratio
Transition
fT
Frequency
300 475
300 450
180 275
60 100
45 70
80 110
MHz
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
IC=-10A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
21 30 pF
Turn-On Time
t(on)
70
ns
Turn-Off Time
t(off)
130
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCB=-10V, f=1MHz
VCC=-6V, IC=-2A
IB1=IB2=50mA
3 - 160
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