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| FMMT6520_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT6520
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-350
-350
-5
-500
Unit
V
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 4)
(Note 5)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
330
379
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 6)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Min
-350
-350
-5
20
30
30
20
15
Collector-Emitter Saturation Voltage
(Note 6)
VCE(sat)
Base-Emitter Saturation Voltage(Note 6)
VBE(sat)
Base-Emitter Turn-On Voltage(Note 6)
Output Capacitance
Transition Frequency
VBE(on)
Cobo
fT
50
Note:
6. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ Max
-50
-50
200
200
-300
-350
-500
-1000
-750
-850
-900
-2.0
6
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
V
pF
MHz
Test Condition
IC = -100µA
IC = -1mA
IE = -10µA
VCB = -250V
VEB = -3V
IC = -1mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC =- 10mA, IB = -1mA
IC =- 20mA, IB = -2mA
IC = -30mA, IB = -3mA
IC = -50mA, IB = -5mA
IC = -10mA, IB = -1mA
IC = -20mA, IB = -2mA
IC = -30mA, IB = -3mA
IC = -100mA, VCE = -10V
VCB = -20V, f = 1MHz
VCE = -20V, IC = -10mA,
f = 20MHz
FMMT6520
Document Number: DS33123 Rev. 3 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
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