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FMMT634_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V NPN DARLINGTON TRANSISTOR IN SOT23
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
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Diodes Incorporated
FMMT634
Value
Unit
120
V
100
V
12
V
900
mA
5
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
C/W
C/W
C/W
C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
JEDEC Class
V
2
V
B
Notes:
5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is measured at t ≤ 5 sec.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT634
Document number: DS33115 Rev. 3 - 2
2 of 7
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March 2014
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