FMMT624 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT-23

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Diodes Incorporated
FMMT624
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
125
125
5
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
625
200
-55 to +150
Notes:
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
Thermal Characteristics and Derating information
Unit
mW
°C/W
°C
FMMT624
Document number: DS33110 Rev. 4 - 2
2 of 6
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October 2010
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