FMMT596 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FMMT596
Electrical characteristics (T_amb = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter saturation
voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat)
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V_BE(sat)
V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Switching times
Switching times
f_T
C_obo
td
tr
ts
tf
td
tr
ts
tf
Min.
-220
-200
-5
100
100
85
35
150
Typ.
22
19
472
70
44
31
665
76
Max.
-100
-100
-100
-0.2
-0.35
-1.0
-0.9
300
10
Unit Conditions
V I_C=-100␮A
V _IC=-10mA ^(*)
V I_E=-100␮A
nA V_CB=-200V
nA V_EB=-4V
nA V_CES=-200V
V I_C=-100mA, I_B=-10mA,
V _IB=-250mA,
I_B=-25mA^(*)
V _{IC=-250mA, IB=-25mA}^(*)
V I_C=-250mA,
V_CE=-10V^(*)
I_C=-1mA, V_CE=-10V
I_C=-100mA, V_CE=-10V^(*)
I_C=-250mA, V_CE=-10V^(*)
I_C=-400mA, V_CE=-10V^(*)
MHz I_C=-50mA, V_CE=-10V,
f=100MHz
pF V_CB=-10V, f=1MHz
ns I_C=-200mA, V_CC=-80V
I_b1=I_b2=-20mA
ns I_C=-100mA, V_CC=-80V
I_b1=I_b2=-10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%.
Issue 4 - July 2007
2
© Zetex Semiconductors plc 2007
www.zetex.com