FMMT593_13 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT593
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Continuous Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
-120
-100
-7
-1
-2
-200
Unit
V
V
V
A
A
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 6)
(Note 7)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
FMMT593
Document number: DS33106 Rev. 5 - 2
2 of 7
www.diodes.com
January 2013
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