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FMMT560TC Datasheet, PDF (2/7 Pages) Diodes Incorporated – 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
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Diodes Incorporated
FMMT560
Value
Unit
-500
V
-500
V
-7
V
-150
mA
-500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
500
250
194
-55 to +150
Unit
mW
C/W
C/W
C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT560
Document Number: DS33102 Rev. 6 - 2
2 of 7
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March 2014
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