FMMT549TA Datasheet, PDF (2/5 Pages) Diodes Incorporated – 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT549 / FMMT549A
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
-35
-30
-5
-1
-2
-200
Unit
V
V
V
A
A
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 4)
(Note 5)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BV_CBO
-35
BV_CEO
-30
BV_EBO
-5
-
I_CBO
-
Emitter Cutoff Current
I_EBO
-
70
80
Static Forward Current Transfer Ratio (Note 6)
FMMT549
h_FE
40
100
FMMT549A
150
-
Collector-Emitter Saturation Voltage
V_CE(sat)
-
FMMT549A
-
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Output Capacitance
V_BE(sat)
-
V_BE(on)
-
C_obo
-
Transition Frequency
f_T
100
Switching Times
t_on
-
t_off
-
Typ
-
-
-
-
-
-
200
130
80
160
200
-250
-500
-
-900
-850
-
-
50
300
Max
-
-
-
-0.1
-10
-0.1
-
-
-
300
500
-500
-750
-300
-1250
-1000
25
-
-
-
Unit
V
V
V
µA
µA
-
-
-
mV
mV
mV
mV
pF
MHz
ns
ns
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -30V
V_CB = -30V, T_A = 100°C
V_EB = -4V
I_C = -50mA, V_CE = -2V
I_C = -1A, V_CE = -2V
I_C = -2A, V_CE = -2V
I_C = -500mA, V_CE = -2V
I_C = -500mA, V_CE = -2V
I_C = - 1A, I_B = -100mA
I_C = - 2A, I_B = -200mA
I_C = -100mA, I_B = -1mA
I_C = -1A, I_B = -100mA
I_C = -1A, V_CE = -2V
V_CB = -10V, f = 1MHz
V_CE = -5V, I_C = -100mA,
f = 100MHz
I_C = -500mA, V_CC = -10V
I_B1 = I_B2 = -50mA
Notes:
4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
FMMT549 / FMMT549A
Document Number: DS33098 Rev. 4 - 2
2 of 5
www.diodes.com
September 2011
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