FMMT495 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

FMMT495
TYPICAL CHARACTERISTICS
0.4
+25 ° C
0.3
0.2
I+/I*=10
I+/I*=50
0.1
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
0.4
I+/I*=10
0.3
0.2
-55 ° C
+25 ° C
+100 ° C
0.1
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VCE(sat) v IC
320 _V+-=10V
+100 ° C
240
+25 ° C
160
-55 ° C
80
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
hFE V IC
I+/I*=10
1.0
0.8
0.6
-55 °C
+25 °C
0.4
+100 °C
0.2
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VBE(sat) v IC
V+-=10V
1.0
0.8
0.6
-55 °C
0.4
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA
1A
10A
IC-Collector Current
VBE(on) v IC
10
1
0.1
0.01
DC
1s
100ms
10ms
1ms
100µs
0.001
0.1
1
10
100
1000
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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