FMMT494TA Datasheet, PDF (2/7 Pages) Diodes Incorporated – 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT494
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
140
120
7
1
2
200
Value
500
250
197
-55 to +150
Unit
V
V
V
A
A
mA
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT494
Document number: DS33095 Rev. 4 - 2
2 of 7
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October 2012
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