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| FMMT493A Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR | |||
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FMMT493A
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
PARAMETER
Collector - Base
Breakdown Voltage
Collector - Emitter
Breakdown Voltage
Emitter - Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector - Emitter
Saturation Voltage
SYMBOL
V(BR)CBO
VCEO(SUS)
V(BR)EBO
ICBO
ICES
IEBO
VCE(SAT)
Base - Emitter Saturation
Voltage
Base Emitter Turn On
Voltage
Static Forward Current
Transfer Ratio
VBE(SAT)
VBE(ON)
hFE
Transition Frequency
fT
MIN.
120
60
5
300
500
300
100
20
150
MAX.
100
100
100
0.25
0.5
1.15
1.0
1200
UNIT
V
V
V
nA
nA
nA
V
V
V
V
Mhz
Output Capacitance
COBO
10
pF
CONDITIONS.
IC = 100â®A
IC = 10mA*
IE = 100â®A
VCB = 45V
VCES = 45V
VEB = 4V
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC=1A, IB = 100mA
IC = 1A, VCE - 10V
IC = 1mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 50mA, VCE = 10V
f = 100MHz
VCB = 10V, f = 1MHz
*Measured under pulsed conditions. Pulse width = 300â®s. Duty Cycle <2%
SEMICONDUCTORS
2
ISSUE 2 - AUGUST 2003
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