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FMMT458_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
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Diodes Incorporated
FMMT458
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
400
400
7
225
1
200
Value
500
250
197
-55 to +150
Unit
V
V
V
mA
A
mA
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT458
Document number: DS33088 Rev. 6 - 2
2 of 7
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January 2013
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