FMMT417TA Datasheet, PDF (2/2 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR

FMMT415
FMMT417
TYPICAL CHARACTERISTICS
180
1. >4x10Operations Without Failure
160
2. 10^%Operations To Failure
140
3. 10^!Operations To Failure
120
100
3.
80
2.
60
40
20
0
0
1.
20 40 60 80 100 120 140 160 180
Pulse Width (ns)
Maximum Avalanche Current
v Pulse Width
100
80
60
40
20
0
100µA
175°C
V+- =10V
25°C
-55°C
1mA
10mA 100mA
1A
Collector Current
hFE v IC
40
30
V+ = 250V
20
V+ = 200V
10
0 _{-60 -40 -20 0 20 40 60 80 100 120 140 160 180}
Temperature (°C)
IUSB v Temperature
for the specified conditions
220
200
Risetime of Base
180
Drive Current = 5mA/ns
160
140
I* =50mA
120
100
100p
1n
I* =100mA
I* =200mA
10n
100n
Collector-Emitter Capacitance (F)
Minimum starting voltage
as a function of capacitance
180
175
I* =60mA
170
165
I* =100mA
160
I* =200mA
155
C=620pF
150
145
1
10
Risetime of Base Drive (mA/ns)
Minimum starting voltage
as a function of drive current
160
150
140
C = 620pF
120
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature (°C)
Minimum starting voltage
as a function of temperature
3 - 105