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DXT13003DK_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Voltage (VBE = 0V)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current (Note 5)
Continuous Base Current
Peak Pulse Base Current (Note 5)
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
DXT13003DK
Value
Unit
700
V
450
V
9
V
1.5
A
3
A
0.75
A
1.5
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
3.9
2.5
2.1
1.6
32
51
59
80
3
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
JEDEC Class
V
3B
V
C
Notes:
5. Pulse test for pulse width < 5ms, duty cycle ≤ 10%.
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 2oz copper.
8. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
9. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXT13003DK
Datasheet Number: DS37297 Rev. 1 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated