DT6250-06MR Datasheet, PDF (2/5 Pages) Diodes Incorporated – 6 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, per IEC 61000-4-5
ESD Protection – Contact Discharge
Operating Temperature
Storage Temperature
Symbol
IPP
VESD_I/O
TOP
TSTG
Value
4
±8
-40 to +85
-55 to +150
DT6250-06MR
Unit
A
kV
°C
°C
Conditions
I/O to VSS, 8/20µs
IO to VSS, per IEC 61000-4-2
—
—
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Symbol
PD
RθJA
Value
500
250
Unit
mW
°C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Working Voltage
Reverse Leakage Current (Note 6)
Channel Leakage Current (Note 6)
Reverse Breakdown Voltage
Forward Voltage
ESD Clamping Voltage
Differential Resistance
Channel Input Capacitance
Delta CI/O
Symbol
VRWM
IR_VCC
IR_IO
VBR
VF
VESD_ I/O
VESD_ VCC
RDIF_ I/O
RDIF_ VCC
CI/O
CI/OMAX-CI/OMIN
Min
—
—
—
6
—
—
—
—
—
—
—
Typ
—
—
—
—
0.8
10
9
0.35
0.25
0.32
0.05
Max
5.0
2.5
1.0
—
1.2
—
—
—
—
—
—
Unit
V
μA
μA
V
V
V
V
Ω
Ω
pF
pF
Test Conditions
VCC to VSS
VCC = 5V, VCC to VSS
VCC = 5V, any I/O to VSS
IBV = 1mA, VCC to VSS
IF = 15mA, VSS to VCC
TLP, 10A, tp = 100ns, I/O to VSS
TLP, 10A, tp = 100ns, VCC to VSS
TLP, 10A, tp = 100ns, I/O to VSS
TLP, 10A, tp = 100ns, VCC to VSS
VI/O = 2.5V, VCC = 5V, f = 1MHz
CI/OMAX-CI/OMIN
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DT6250-06MR
Document number: DS36357 Rev. 3 - 2
2 of 5
www.diodes.com
April 2015
© Diodes Incorporated