DT454P Datasheet, PDF (2/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
-30
—
Zero Gate Voltage Drain Current
T_j = 70°C
I_DSS
—
—
Gate-Body Leakage, Forward
I_GSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V_GS(th)
-1.0
Static Drain-Source On-Resistance
T_j = 125°C
R_{DS (ON)}
—
-2.7
0.038
0.046
0.064
On-State Drain Current
I_D(ON)
-15
-5.0
—
Forward Transconductance
DYNAMIC CHARACTERISTICS
g_FS
—
10
Input Capacitance
C_ISS
—
950
Output Capacitance
C_OSS
—
610
Reverse Transfer Capacitance
C_RSS
—
220
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
10
Turn-On Rise Time
tr
—
18
Turn-Off Delay Time
t_D(OFF)
—
80
Turn-Off Fall Time
t_f
—
45
Total Gate Charge
Q_g
—
29
Gate-Source Charge
Q_gs
—
3.0
Gate-Drain Charge
Q_gd
—
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
-0.85
Reverse Recovery Time
trr
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
-1.0
-5.0
100
-100
—
0.05
0.07
0.09
—
—
—
—
—
30
60
120
100
40
—
—
-1.9
-1.3
100
Unit
Test Condition
V
VGS = 0V, ID = -250µA
µA
VDS = -24V, VGS = 0V
V_DS = -15V, V_GS = 0V
nA
VGS = 20V, VDS = 0V
nA
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5.9A
W
V_GS = -6 .0V, I_D = -5.2A
V_GS = -4.5V, I_D = -4.6A
A
VGS = -10V, VDS = -5.0V
V_GS = -4.5V, V_DS = -5.0V
m
VDS = -15V, ID = -5.9A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = -15V, I_D = -1.0A
ns
V_GEN = -10V, R_GEN = 6.0W
ns
nC
nC
V_DS = -15V. I_D = -5.9A.
V_GS = -10V
nC
A
V
VGS = 0V, IS = -5.9A (Note 2)
ns
VGS = 0V, IF = -5.9A
dl_p/dt = 100 A/µs
DS11613 Rev. C-4
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DT454P