DT453N Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
30
—
Zero Gate Voltage Drain Current
T_{j =125°C}
IDSS
—
—
Gate-Body Leakage, Forward
I_GSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
1.0
0.7
2.0
1.5
Static Drain-Source On-Resistance
RDS (ON)
—
T_j = 125°C
0.022
0.03
0.035
0.047
On-State Drain Current
I_D(ON)
15
10
—
Forward Transconductance
g_FS
—
14
DYNAMIC CHACTERISTICS
Input Capacitance
C_ISS
—
890
Output Capacitance
C_OSS
—
560
Reverse Transfer Capacitance
C_RSS
—
190
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
10
Turn-On Rise Time
tr
—
20
Turn-Off Delay Time
t_D(OFF)
—
40
Turn-Off Fall Time
tf
—
35
Total Gate Charge
Q_g
—
28
Gate-Source Charge
Q_gs
—
4.5
Gate-Drain Charge
Q_gd
—
9.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
0.8
Reverse Recovery Time
t_rr
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
1.0
10
100
-100
3.0
2.2
0.028
0.045
0.042
0.075
—
—
—
—
—
15
35
50
50
35
—
—
2.3
1.3
100
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
V_DS = 24V, V_GS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 8.0A
W
V_GS = 4.5V, I_D = 6.7A
A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
m
VDS = 15V, ID = 8.0A
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 25V, I_D = 1.0A
ns
V_GEN = 10V, R_GEN = 6.0W
ns
nC
nC
V_DS = 15V, I_D = 8.0A.
V_GS = 10V
nC
A
V
VGS = 0V, IS = -8.0A (Note 2)
ns
VGS = 0V, IF = 2.0A
dl_p/dt = 100 A/µs
DS11608 Rev. C-4
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DT453N