DT3055L Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
60
—
Zero Gate Voltage Drain Current
T_j =125°C
I_DSS
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
IGSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(h)
1.0
0.6
1.7
1.3
Static Drain-Source On-Resistance
—
RDS (ON)
—
Tj = 125°C
—
0.105
0.17
—
On-State Drain Current
I_D(ON)
10
—
Forward Transconductance
g_FS
—
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
435
Output Capacitance
C_OSS
—
120
Reverse Transfer Capacitance
C_RSS
—
30
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
—
8.0
Turn-On Rise Time
t_r
—
4.0
Turn-Off Delay Time
t_D(OFF)
—
24
Turn-Off Fall Time
t_f
—
7.0
Total Gate Charge
Q_g
—
13.5
Gate-Source Charge
Q_gs
—
1.5
Gate-Drain Charge
Q_gd
—
4.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Source-Drain Diode Forward Voltage
V_SD
—
0.86
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
1.0
50
100
-100
2.0
1.6
0.12
0.24
0.10
—
—
—
—
—
20
20
50
20
20
3.0
8.0
2.5
1.2
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, V_GS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 3.5A
W
V_GS = 10V, ID = 3.9A
A
VGS = 5.0V, VDS = 10V
m
VDS = 5.0V, ID = 3.5A
pF
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 25V, I_D = 1.0A
ns
V_GS = 10V, R_GEN = 6.0W
ns
nC
nC
VDS = 40V. ID = 3.5A.
V_GS = 10V
nC
A
V
VGS = 0V, IS = 1.5A (Note 2)
DS11605 Rev. C-4
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DT3055L