DT3055 Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
60
—
Zero Gate Voltage Drain Current
T_j =125°C
IDSS
—
—
—
—
Gate-Body Leakage, Forward
I_GSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_{j = 100°C} ^VGS(th)
2.0
1.5
2.9
2.3
Static Drain-Source On-Resistance
T_j = 125°C
R_{DS (ON)}
—
—
0.075
0.13
On-State Drain Current
I_D(ON)
15
—
Forward Transconductance
g_FS
—
3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
350
Output Capacitance
C_OSS
—
135
Reverse Transfer Capacitance
C_RSS
—
40
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
18
Turn-On Rise Time
t_r
—
25
Turn-Off Delay Time
t_D(OFF)
—
43
Turn-Off Fall Time
t_f
—
34
Total Gate Charge
Q_g
—
10
Gate-Source Charge
Q_gs
—
2.0
Gate-Drain Charge
Q_gd
—
6.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Source-Drain Diode Forward Voltage
VSD
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
10
100
100
-100
4.0
3.0
0.10
0.22
—
—
—
—
—
25
50
65
60
15
4.0
10
2.5
1.2
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = 250µA
W
VGS = 10V, ID = 4.0A
A
VGS = 10V. VDS = 10V
m
VDS = 15V, ID = 4.0A
pF
pF
V_DS = 30V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 25V, I_D = 1.2A
ns
V_GS = 10V, R_GEN = 50W
ns
nC
nC
V_DS = 40V. I_D = 4.0A.
V_GS = 10V
nC
A
V
VGS = 0V, IS = 4.0A (Note 2)
DS11604 Rev. C-4
2 of 4
DT3055