DT2955 Datasheet, PDF (2/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
-60
—
Zero Gate Voltage Drain Current
T_j = 125°C
I_DSS
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
-2.0
-0.8
-2.4
-2.0
Static Drain-Source On-Resistance
T_j = 125°C RDS (ON)
—
0.21
0.3
0.36
On-State Drain Current
I_D(ON)
-12
—
Forward Transconductance
g_FS
—
3.5
DYNAMIC CHACTERISTICS
Input Capacitance
Ciss
—
570
Output Capacitance
C_oss
—
140
Reverse Transfer Capacitance
C_rss
—
40
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
8.0
Turn-On Rise Time
t_r
—
20
Turn-Off Delay Time
t_D(OFF)
—
20
Turn-Off Fall Time
t_f
—
5.0
Total Gate Charge
Q_g
—
16
Gate-Source Charge
Q_gs
—
2.0
Gate-Drain Charge
Q_gd
—
4.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
-10
-100
100
-100
-4.0
-2.6
0.30
0.45
0.50
—
—
—
—
—
15
40
40
20
25
5.0
8.0
-2.3
-1.3
Unit
V
µA
nA
nA
Test Conditions
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -2.5A
W
V_GS = -10V, I_D = -2.5A
V_GS = -4.5V, I_D = -2.0A
A
VGS = -10V, VDS = -5.0V
m
VDS = -10V, ID = -2.5A
pF
pF
V_DS = -25V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = -30V, I_D = -1.0A
ns
V_GEN = -10V, R_GEN = 6.0W
ns
nC
nC
V_DS = -30V. I_D = -2.5A.
V_GS = -10V
nC
A
V
VGS = 0V, IS = -2.5A (Note 2)
DS11610 Rev. C-4
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DT2955