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DT1446-04TS Datasheet, PDF (2/5 Pages) Diodes Incorporated – 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY | |||
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current ,per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection â Contact Discharge
ESD Protection â Air Discharge, per IEC 61000-4-2
Symbol
IPP_I/O
VDC
VESD_I/O
VESD_VCC
VESD_I/O
VESD_VCC
Value
4.7
6
±16
±30
±19
±30
DT1446-04TS
Unit
A
V
kV
kV
kV
kV
Conditions
I/O to VSS, 8/20µs
VCC to VSS
I/O to VSS, per IEC 61000-4-2
VCC to VSS, per IEC 61000-4-2
I/O to VSS, per IEC 61000-4-2
VCC to VSS, per IEC 61000-4-2
Thermal Characteristics
Characteristic
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Reverse Working Voltage
VRWM
â
Reverse Current (Note 6)
IR(VCC to VSS)
â
Reverse Current (Note 6)
IR(IO to VSS)
â
Reverse Breakdown Voltage
VBR
6.0
Forward Clamping Voltage
VF
Reverse Clamping Voltage (Note 7)
VC_I/O
â
ESD Clamping Voltage
VESD_VCC
â
VESD_I/O
â
Dynamic Resistance
RDIF_VCC
â
RDIF_I/O
â
Channel Input Capacitance
CI/O to VSS
â
Channel Input Capacitance
CI/O to VSS
â
Variation of Channel Input
Capacitance
CI/OMAX-CI/OMIN
â
Variation of Channel Input
Capacitance
CI/OMAX-CI/OMIN
â
Typ
â
â
â
â
0.8
8.5
10
12
0.14
0.3
0.55
0.65
0.03
0.05
Max
5.0
5.0
1.0
9.0
1.0
â
â
â
â
â
0.65
â
â
â
Unit
V
μA
μA
V
V
V
V
V
â¦
â¦
pF
pF
pF
pF
Test Conditions
VCC to VSS
VR = VRWM = 5V, VCC to VSS
VR = VRWM = 5V, any I/O to VSS
IR = 1mA, VCC to VSS
IF = 15mA, VSS to VCC
IPP =4.7A, I/O to VSS, 8/20µs
TLP, 20A, tp = 100 ns, VCC to VSS
TLP, 20A, tp = 100 ns, I/O to VSS
TLP, 20A, tp = 100 ns, VCC to VSS
TLP, 20A, tp = 100 ns, I/O to VSS
VR = 2.5V, VCC = 5V, f = 1MHz
VR = 2.5V, VCC = floating, f = 1MHz
VCC = 5V, VSS = 0V, I/O = 2.5V, f =1MHz,
T = +25°C , CI/OMAX - CI/OMIN
VCC = floating , VSS = 0V, I/O = 2.5V,
f = 1MHz, T = +25°C , CI/OMAX - CI/OMIN
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
DT1446-04TS
Document number: DS37408 Rev. 2 â 2
2 of 5
www.diodes.com
July 2014
© Diodes Incorporated
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