DT1446-04SO Datasheet, PDF (2/5 Pages) Diodes Incorporated – 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Marking Information
DT1446-04SO
BD5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan
Feb
1
2
2014
B
Mar
Apr
3
4
2015
C
May
Jun
5
6
2016
D
Jul
Aug
7
8
2017
E
Sep
Oct
9
O
2018
F
Nov
Dec
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current ,per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection – Contact Discharge
ESD Protection – Air Discharge, per IEC 61000-4-2
Symbol
IPP_I/O
VDC
VESD_I/O
VESD_VCC
VESD_I/O
VESD_VCC
Value
4.7
6
±16
±30
±19
±30
Unit
A
V
kV
kV
kV
kV
Conditions
I/O to VSS, 8/20µs
VCC to VSS
I/O to VSS, per IEC 61000-4-2
VCC to VSS, per IEC 61000-4-2
I/O to VSS, per IEC 61000-4-2
VCC to VSS, per IEC 61000-4-2
Thermal Characteristics
Characteristic
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
ºC
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Reverse Working Voltage
VRWM
—
Reverse Current (Note 6)
IR(VCC to VSS)
—
Reverse Current (Note 6)
IR(IO to VSS)
—
Reverse Breakdown Voltage
VBR
6.0
Forward Clamping Voltage
VF
—
Reverse Clamping Voltage (Note 7)
VC_I/O
—
ESD Clamping Voltage
VESD_VCC
—
VESD_I/O
—
Dynamic Resistance
RDIF_VCC
—
RDIF_I/O
—
Channel Input Capacitance
CI/O to VSS
—
Channel Input Capacitance
CI/O to VSS
—
Variation of Channel Input
Capacitance
CI/OMAX-CI/OMIN
—
Variation of Channel Input
Capacitance
CI/OMAX-CI/OMIN
—
Typ
—
—
—
—
0.8
8.5
10
12
0.14
0.3
0.55
0.65
0.03
0.05
Max
5.0
5.0
1.0
9.0
1.0
—
—
—
—
—
0.65
—
—
—
Unit
V
μA
μA
V
V
V
V
V
Ω
Ω
pF
pF
pF
pF
Test Conditions
VCC to VSS
VR = VRWM = 5V, VCC to VSS
VR = VRWM = 5V, any I/O to VSS
IR = 1mA, VCC to VSS
IF = 15mA, VSS to VCC
IPP =4.7A, I/O to VSS, 8/20µS
TLP, 20A, tp = 100 ns, VCC to VSS
TLP, 20A, tp = 100 ns, I/O to VSS
TLP, 20A, tp = 100 ns, VCC to VSS
TLP, 20A, tp = 100 ns, I/O to VSS
VR = 2.5V, VCC = 5V, f = 1MHz
VR = 2.5V, VCC = floating, f = 1MHz
VCC = 5V, VSS = 0V, I/O = 2.5V, f =1MHz,
T = +25°C , CI/OMAX-CI/OMIN
VCC =floating , VSS = 0V, I/O = 2.5V,
f = 1MHz, T = +25°C , CI/OMAX-CI/OMIN
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
DT1446-04SO
Document number: DS36526 Rev. 3 – 2
2 of 5
www.diodes.com
August 2014
© Diodes Incorporated