DST847BDJ Datasheet, PDF (2/5 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DST847BDJ
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1
D = 0.7
D = 0.5
D = 0.3
1,000
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001 0.0001
D = 0.9
0.001 0.01
0.1
1
10
t₁, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.4
R_θJA(t) = r(t) * R_θJA
R_θJA = 370°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
100 1,000 10,000
100
Single Pulse
R_θJA(t) = r(t) * R_θJA
R_θJA = 370°C/W
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
0.3
Note 3
10
0.2
1
0.1
0.1
0.00001 0.001
0.1
10
1,000
t₁, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
T_A, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST847BDJ
Document number: DS32035 Rev. 1 - 2
2 of 5
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January 2010
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