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| DSS9110Y Datasheet, PDF (2/6 Pages) Diodes Incorporated – 100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR | |||
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current â Continuous
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
Symbol
PD
RθJA
TJ, TSTG
0.8
10
0.6
1
DSS9110Y
Value
-120
-100
-5
-1
-3
-0.3
Value
625
200
-55 to +150
Unit
V
V
V
A
A
A
Unit
mW
°C/W
°C
Pw = 100µs
0.4
0.1
0.2
RθJA = 200°C/W
0.01
0
0
50
100
150
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.001
0.1
1
10
100
1,000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
D = 0.9
0.001
RθJA(t) = r(t) * RθJA
RθJA = 163°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
1,000
DSS9110Y
Document number: DS31678 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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