DSS60601MZ4 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DSS60601MZ4
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
V_(BR)CBO
100
⎯
V_(BR)CEO
60
⎯
V_(BR)EBO
6
⎯
⎯
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
150
⎯
120
⎯
h_FE
100
⎯
50
⎯
⎯
⎯
⎯
⎯
V_CE(SAT)
⎯
80
⎯
⎯
⎯
⎯
R_CE(SAT)
⎯
40
V_BE(SAT)
⎯
⎯
V_BE(ON)
⎯
⎯
Transition Frequency
f_T
100
⎯
Output Capacitance
Input Capacitance
C_obo
⎯
26
C_ibo
⎯
325
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
100
50
100
⎯
360
⎯
⎯
40
60
100
220
300
50
0.9
0.9
⎯
⎯
⎯
Unit
Test Conditions
V I_C = 100μA
V I_C = 10mA
V I_E = 100μA
nA V_CB = 40V, I_E = 0
μA V_CB = 40V, I_E = 0, T_A = 150°C
nA V_EB = 6V, I_C = 0
V_CE = 2V, I_C = 0.5A
⎯ ^{VCE = 2V, IC = 1A}
V_CE = 2V, I_C = 2A
V_CE = 2V, I_C = 6A
I_C = 0.1A, I_B = 2.0mA
I_C = 1A, I_B = 100mA
mV I_C = 2A, I_B = 200mA
I_C = 3A, I_B = 60mA
I_C = 6A, I_B = 600mA
mΩ I_E = 2A, I_B = 200mA
V I_C = 1A, I_B = 100mA
V V_CE = 2V, I_C = 1A
MHz
pF
pF
V_CE = 10V, I_C = 100mA,
f = 100MHz
V_CB = 10V, f = 1MHz
V_EB = 5V, f = 1MHz
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature
100
10
1
0.1
Pw = 1ms
Pw = 10ms
Pw = 100ms
0.01
0.001
0.1
1
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DSS60601MZ4
Document number: DS31587 Rev. 2 - 2
2 of 5
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December 2008
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