DSS5240Y Datasheet, PDF (2/6 Pages) Diodes Incorporated – 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
Symbol
P_D
R_θJA
T_J, T_STG
0.8
10
0.6
1
Value
-40
-40
-5
-2
-3
-300
-1
Value
625
200
-55 to +150
Pw = 100µs
DSS5240Y
Unit
V
V
V
A
A
mA
A
Unit
mW
°C/W
°C
0.4
0.1
0.2
R_θJA = 200°C/W
0.01
0
0
50
100
150
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
0.001
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001 0.001
0.01
R_θJA(t) = r(t) * R_θJA
R_θJA = 177°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
0.1
1
10
100
t₁, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
1,000 10,000 100,000
DSS5240Y
Document number: DS31683 Rev. 2 - 2
2 of 6
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October 2010
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