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DSS5160U_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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DSS5160U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Symbol Min Typ
V(BR)CBO
-80
⎯
V(BR)CEO
-60
⎯
V(BR)EBO
-5
⎯
Collector Cutoff Current
ICBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
ICES
IEBO
⎯
⎯
⎯
⎯
200 ⎯
hFE
150 ⎯
100
⎯
⎯
⎯
VCE(SAT)
⎯
⎯
⎯
⎯
RCE(SAT)
⎯
⎯
VBE(SAT)
⎯
⎯
VBE(ON)
⎯
⎯
Cobo
fT
⎯
⎯
150 ⎯
ton
⎯
75
td
⎯
35
tr
⎯
40
toff
⎯ 265
ts
⎯ 230
tf
⎯
35
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
-100
-50
-100
-100
⎯
⎯
⎯
-175
-180
-340
340
-1.1
-0.9
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V IC = -100μA, IE = 0
V IC = -10mA, IB = 0
V IE = -100μA, IC = 0
nA VCB = -60V, IE = 0
μA VCB = -60V, IE = 0, TA = 150°C
nA VCE = -60V, VBE = 0
nA VEB = -5V, IC = 0
VCE = -5V, IC = -1mA
⎯ VCE = -5V, IC = -500mA
VCE = -5V, IC = 1A
IC = -100mA, IB = -1mA
mV IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
mΩ IC = -1A, IB = -100mA
V IC = -1A, IB = -50mA
V VCE = 5V, IC = 1A
pF VCB = -10V, f = 1.0MHz
MHz VCE = -10V, IC = -50mA, f = 100MHz
ns
ns
ns VCC = -10V
ns IC = -0.5A, IB1 = IB2 = -25mA
ns
ns
600
500
400
300
200
100
RθJA = 313°C/W
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
10
1
0.1
0.01
Pw = 1ms
Pw = 10ms
Pw = 100ms
DC
0.001
0.1
1
10
100
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DSS5160U
Document number: DS31685 Rev. 2 - 2
2 of 5
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March 2009
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