DSS5160T_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
Value
-80
-60
-5
-1
-2
-300
-1
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJA
T_J, T_STG
Value
725
172
79
-55 to +150
Notes:
4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25.
5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Thermal Characteristics
DSS5160T
Unit
V
V
V
A
A
mA
A
Unit
mW
°C/W
°C/W
°C
V
10
CE(sat)
Limit
1
T =25°C
amb
15mm x 15mm
1oz FR4
100m DC
1s
10m _100ms
1m
10ms 1ms ^100µs
1000µ.1
1
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
180
T =25°C
160 ^amb
140
120
100 D=0.5
80
60
D=0.2
40
Single Pulse
D=0.05
20
D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
0.8
0.6
0.4
0.2
0.00 _{20 40 60 80 100 120 140 160}
Temperature (°C)
Derating Curve
Single Pulse
100
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
DSS5160T
Document number: DS35532 Rev. 1 - 2
2 of 6
www.diodes.com
January 2012
© Diodes Incorporated