DSS4240T Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DSS4240T
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
V_(BR)CBO
40
⎯
V_(BR)CEO
40
⎯
V_(BR)EBO
5
⎯
⎯
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
350
⎯
300
⎯
h_FE
300
⎯
150
⎯
⎯
⎯
⎯
30
V_CE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
R_CE(SAT)
⎯
60
V_BE(SAT)
⎯
⎯
V_BE(ON)
⎯
⎯
Transition Frequency
f_T
100
⎯
Output Capacitance
C_ob
⎯
⎯
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
100
50
100
⎯
⎯
⎯
⎯
70
100
180
180
320
200
1.1
0.75
⎯
20
Unit
Test Conditions
V I_C = 100μA
V I_C = 10mA
V I_E = 100μA
nA V_CB = 30V, I_E = 0
μA V_CB = 30V, I_E = 0, T_A = 150°C
nA V_EB = 4V, I_C = 0
V_CE = 2V, I_C = 0.1A
⎯ ^{VCE = 2V, IC = 0.5A}
V_CE = 2V, I_C = 1A
V_CE = 2V, I_C = 2A
I_C = 100mA, I_B = 1mA
I_C = 500mA, I_B = 50mA
mV I_C = 750mA, I_B = 15mA
I_C = 1A, I_B = 50mA
I_C = 2A, I_B = 200mA
mΩ I_C = 500mA, I_B = 50mA
V I_C = 2A, I_B = 200mA
V V_CE = 2V, I_C = 100mA
MHz
V_CE = 10V, I_C = 100mA,
f = 100MHz
pF V_CB = 10V, f = 1MHz
800
700
600
500
400
300
200
100
R_θJA = 209°C/W
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
2.0
1.8
I_B = 5mA
1.6
I_B = 4mA
1.4
I_B = 3mA
1.2
1.0
I_B = 2mA
0.8
0.6
0.4
I_B = 1mA
0.2
0
0
2
4
6
8
10
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS4240T
Document number: DS31623 Rev. 3 - 2
2 of 5
www.diodes.com
May 2009
© Diodes Incorporated