DSS2515M Datasheet, PDF (2/5 Pages) Diodes Incorporated – 15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

DSS2515M
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T_A = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P_D
R_θJA
T_J, T_STG
Value
15
15
6
500
1
100
Value
250
500
-55 to +150
Unit
V
V
V
mA
A
mA
Unit
mW
°C/W
°C
1,000
100
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
0.01
D = 0.02
D = 0.01
R_θJA(t) = r(t) * R_θJA
R_θJA = 500°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
D = 0.005
0.001
D = Single Pulse
0.000001 0.00001 0.0001
0.001 0.01
0.1
1
10
t₁, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.30
100 1,000 10,000
Single Pulse
R_θJA(t) = r(t) * R_θJA
R_θJA = 500°C/W
T_J - T_A = P * R_θJA(t)
0.25
0.20
10
0.15
0.10
1
0.05 ^RθJA ^{= 500°C/W}
0.1
1E-06 0.0001 0.01
1
100 10,000
t₁, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0
50
100
150
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
DSS2515M
Document number: DS31816 Rev. 3 - 2
2 of 5
www.diodes.com
January 2011
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