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DSS20201L_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DSS20201L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
V(BR)CBO
20
⎯
V(BR)CEO
20
⎯
V(BR)EBO
6
⎯
ICBO
⎯
⎯
IEBO
⎯
⎯
200
⎯
200
330
hFE
200
⎯
200
⎯
⎯
⎯
⎯
40
VCE(SAT)
⎯
75
⎯
70
RCE(SAT)
⎯
35
VBE(SAT)
⎯
⎯
VBE(ON)
⎯
⎯
Transition Frequency
fT
150
⎯
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
⎯
⎯
Cibo
⎯
⎯
ton
⎯
⎯
td
⎯
⎯
tr
⎯
⎯
toff
⎯
⎯
ts
⎯
⎯
tf
⎯
⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
100
100
⎯
⎯
⎯
⎯
10
50
90
100
50
0.9
0.9
⎯
45
450
200
100
100
610
500
110
Unit
Test Conditions
V IC = 100μA
V IC = 10mA
V IE = 100μA
nA VCB = 20V, IE = 0
nA VEB = 6V, IC = 0
VCE = 2V, IC = 10mA
⎯ VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
IC = 0.1A, IB = 10mA
mV IC = 1.0A, IB = 100mA
IC = 1.0A, IB = 10mA
IC = 2.0A, IB = 200mA
mΩ IE = 2A, IB = 200mA
V IC = 1A, IB = 10mA
V VCE = 2V, IC = 1A
MHz
pF
pF
VCE = 5V, IC = 100mA,
f = 100MHz
VCB = 3V, f = 1MHz
VEB = 0.5V, f = 1MHz
ns
ns VCC = 15V, IC = 750mA,
ns IB1 = 15mA
ns
ns VCC = 15V, IC = 750mA,
ns IB1 = IB2 = 15mA
1.6
1.4
1.2
1.0
0.8
(Note 4)
0.6
(Note 3)
0.4
0.2
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
10
Pw = 10ms
1
Pw = 100ms
0.1
DC
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS20201L
Document number: DS31605 Rev. 2 - 2
2 of 5
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December 2008
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