DRTR5V0U4S Datasheet, PDF (2/4 Pages) Diodes Incorporated – 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Maximum Ratings (@T_A = +25°C, unless otherwise specified)
Characteristic
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
I_PP
V_{ESD_Contact}
V_{ESD_Air}
Value
5
±8
±15
DRTR5V0U4S
Unit
Conditions
A
8/20µs, Per Figure 2
kV
Standard IEC 61000-4-2
kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-65 to +150
Unit
mW
C/W
C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6, 7)
Reverse breakdown voltage
Forward Voltage
Dynamic Resistance
I/O to GND Capacitance
I/O to I/O Capacitance
Symbol
Min
Typ
Max
Unit
Test Conditions
V_RWM
—
—
5.5
V
-
I_R
—
1
100
nA V_R = 3V
V_BR
6.0
—
9.0
V
I_R = 1mA, from pin 5 to pin 2
V_F
—
0.8
—
V
I_F = 8mA
R_DYN
—
0.9
—
Ω
I_PP = 1A, t_p = 8/20μs
C_(I/O-GND)
—
1.0
1.5
pF
V_(I/O-GND) = 0V, f = 1MHz
C_(I/O-I/O)
—
0.6
—
pF
V_(I/O-I/O) = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1, 3, 4, 5 and 6 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
200
175
Note 5
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175
T_A, AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
100
75
50
25
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
DRTR5V0U4S
Document number: DS36008 Rev. 3 - 2
2 of 4
www.diodes.com
June 2013
© Diodes Incorporated