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DRDNB21D Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEX ARRAY FOR DUAL RELAY DRIVER
Maximum Ratings, Switching Diode @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
500
250
4.0
2.0
Unit
V
V
V
mA
mA
A
Electrical Characteristics, Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
DR1
DR2/R1
fT
Min Typ Max Unit
Test Condition
0.5
¾
¾ V VCC = 5V, IO = 100mA
¾
¾ 1.1 V VO = 0.3V, IO = 5mA
¾
¾ 0.3 V IO/Il = 50mA/0.25mA
¾
¾ 3.6 mA VI = 5V
¾
¾ 0.5 uA VCC = 50V, VI = 0V
80
¾
¾ ¾ VO = 5V, IO = 10mA
-30 ¾ +30 %
-20 ¾ +20 %
¾
250
¾
MHz
VCE = 10V, IE = 5mA,
f = 100MHz
Electrical Characteristics, Switching Diode @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage (Note 4)
Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
75
0.62
¾
¾
¾
¾
¾
¾
Max
¾
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR = 10mA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes:
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30756 Rev. 3 - 2
2 of 5
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DRDNB21D