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DNLS350E_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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DNLS350E
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(SAT)
RCE(SAT)
VBE(SAT)
VBE(ON)
Min
⎯
⎯
⎯
50
50
5
200
200
100
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
62
⎯
⎯
Transition Frequency
fT
100
⎯
Output Capacitance
Cobo
⎯
⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
100
50
100
⎯
⎯
⎯
⎯
⎯
⎯
90
170
290
145
1.2
1.1
⎯
30
Unit
Test Conditions
nA VCB = 50V, IE = 0
μA VCB = 50V, IE = 0, TA = 150°C
nA VEB = 5V, IC = 0
V IC = 100μA
V IC = 10mA
V IE = 100μA
VCE = 2V, IC = 0.5A
⎯ VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
IC = 0.5A, IB = 50mA
mV IC = 1A, IB = 50mA
IC = 2A, IB = 200mA
mΩ IE = 2A, IB = 200mA
V IC = 2A, IB = 200mA
V VCE = 2V, IC = 1A
MHz
VCE = 5V, IC = 100mA,
f = 100MHz
pF VCB = 10V, f = 1MHz
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
3.0
IB = 10mA
2.5
IB = 8mA
2.0
IB = 6mA
1.5
IB = 4mA
1.0
IB = 2mA
0.5
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
DNLS350E
Document number: DS31231 Rev. 3 - 2
2 of 5
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April 2009
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