DNLS160V Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
Min
80
60
5
Typ
⎯
⎯
⎯
Collector Cutoff Current
I_CBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
I_CES
I_EBO
h_FE
V_CE(SAT)
R_CE(SAT)
V_BE(SAT)
V_BE(ON)
C_obo
f_T
t_on
t_d
t_r
t_off
t_s
t_f
⎯
⎯
⎯
⎯
250 320
200 280
100 165
⎯
80
⎯
80
⎯
140
⎯ 140
⎯ 0.91
⎯ 0.81
⎯
7
150 270
⎯
90
⎯
17
⎯
73
⎯ 300
⎯ 220
⎯
80
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
100
50
100
100
⎯
⎯
⎯
110
140
250
250
1.1
0.9
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100μA, I_C = 0
nA V_CB = 60V, I_E = 0
μA V_CB = 60V, I_E = 0, T_A = 150°C
nA V_CE = 60V, V_BE = 0
nA V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 1mA
V V_CE = 5V, I_C = 500mA
V_CE = 5V, I_C = 1A
I_C = 100mA, I_B = 1mA
mV I_C = 500mA, I_B = 50mA
I_C = 1A, I_B = 100mA
mΩ I_C = 1A, I_B = 100mA
V I_C = 1A, I_B = 50mA
V V_CE = 5V, I_C = 1A
pF V_CB = 10V, f = 1.0MHz
MHz V_CE = 10V, I_C = 50mA, f = 100MHz
ns
ns
ns V_CC = 10V
ns IC = 0.5A, IB1 = IB2 = 25mA
ns
ns
300
250
200
150
100
50
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
Fig. 2 Typical Collector Current vs.
Collector-Emitter Voltage
DS31248 Rev. 3 - 2
2 of 4
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DNLS160V
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