DMTH4007SK3 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

DMTH4007SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V (Note 5)
TA = +25C
TA = +100C
ID
17.6
12.5
A
Continuous Drain Current, VGS = 10V (Note 6)
TC = +25C
TC = +100C
ID
76
54
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
60
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
100
A
Avalanche Current, L=0.3mH
IAS
20
A
Avalanche Energy, L=0.3mH
EAS
60
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
3.1
47
59
2.5
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
2082
790
113
0.46
41.9
10
11.5
7
11.5
15.6
8.8
29.9
23
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
-
1
±100
4
6
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V
VGS = 0V, ID = 1mA
μA V_DS = 32V, V_GS = 0V
nA V_GS = ±20V, V_DS = 0V
V
VDS = VGS, ID = 250μA
mΩ V_GS = 10V, I_D = 20A
V
VGS = 0V, IS = 20A
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC V_DS = 30V, I_D = 20A, V_GS = 10V
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
ns
nC ^{IF = 20A, di/dt = 100A/μs}
DMTH4007SK3
Document number: DS38564 Rev. 1 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated