DMTH4005SPS Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Notes 6 & 9)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.6mH
Avalanche Energy, L=0.6mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH4005SPS
Value
Unit
40
V
±20
V
20.9
17.5
A
100
100
A
100
A
150
A
21
A
132.3
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA= +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
Typ Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
BVDSS
40
IDSS
—
IGSS
—
——
—
1
— ^±100
V
VGS = 0V, ID = 1mA
μA V_DS = 32V, V_GS = 0V
nA V_GS = ±20V, V_DS = 0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
VGS(TH)
2
—
4
RDS(ON)
—
2.9
3.7
VSD
— ^0.88
—
V
VDS = VGS, ID = 250μA
mΩ V_GS = 10V, I_D = 50A
V
VGS = 0V, IS = 50A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
— ³⁰⁶² —
— ^902.2 —
— ^179.2 —
— ^0.67 —
— ^49.1 —
— ^10.3 —
— ¹³ —
— ^8.7 —
— ^6.8 —
— ^18.6 —
— ^7.3 —
— 31.8
—
— 26.5
—
pF
VDS = 20V, VGS = 0V,
f = 1MHz
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC ^{VDD = 20V, ID = 50A,}
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ns
nC ^{IF = 50A, di/dt = 100A/μs}
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH4005SPS
Document number: DS38150 Rev. 2 - 2
2 of 7
www.diodes.com
November 2015
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