DMT6010LSS Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMT6010LSS
Value
60
±20
14.0
11.0
16.7
13.5
3
80
20
20
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.5
80
48
2.0
53
37
6.5
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
60
—
—
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6
8
0.9
2,090
746
38.5
0.59
19.3
41.3
6.0
8.8
5.7
4.3
23.4
9.7
Max
—
1
±100
2.0
8
12
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 250μA
μA V_DS = 48V, V_GS = 0V
nA V_GS = ±20V, V_DS = 0V
V
VDS = VGS, ID = 250μA
mΩ ^{VGS = 10V, ID = 20A}
VGS = 4.5V, ID = 20A
V
VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC V_DS = 30V, I_D = 20A
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
DMT6010LSS
Document number: DS37362 Rev. 1 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated