DMT6004SCT Datasheet, PDF (2/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
TC = +25°C
(Note 9)
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMT6004SCT
Value
60
±20
100
100
100
180
45
200
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
R_JA
PD
R_JC
TJ, TSTG
Value
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
60
IDSS
—
IGSS
—
VGS(TH)
2
RDS(ON)
—
VSD
—
Ciss
—
Coss
—
Crss
—
RG
—
Qg
—
Qgs
—
Qgd
—
tD(ON)
—
tR
—
tD(OFF)
—
tF
—
tRR
—
QRR
—
Typ
—
—
—
—
3.1
—
4556
1383
105
0.7
95.4
21.6
20.4
14.3
99.1
40
17.6
50.5
80.8
Max
—
1
±100
4
3.65
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
Unit
Test Condition
V
VGS = 0V, ID = 1mA
µA V_DS = 48V, V_GS = 0V
nA V_GS = ±20V, V_DS = 0V
V
VDS = VGS, ID = 250 A
m V_GS = 10V, I_D = 100A
V
VGS = 0V, IS = 100A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
 V_DS = 0V, V_GS = 0V, f = 1MHz
nC ^{VDD = 30V, ID = 90A,}
VGS = 10V
ns
VDD = 30V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC ^{IF = 48A, di/dt = 100A/µs}
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
2 of 6
www.diodes.com
April 2016
© Diodes Incorporated