DMT10H015LPS Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 7) L=3mH
Avalanche Energy (Note 7) L=3mH
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMT10H015LPS
Value
Unit
100
V
±20
V
7.3
5.8
A
44
28
A
A
1.5
A
7.5
A
85
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
100
IDSS
—
IGSS
—
VGS(TH)
1.4
—
RDS(ON)
—
—
VSD
—
CISS
—
COSS
—
CRSS
—
RG
—
QG
—
QGS
—
QGD
—
tD(ON)
—
tR
—
tD(OFF)
—
tF
—
tRR
—
QRR
—
Typ
—
—
—
2.0
14
15
17
0.9
1,871
261
6.9
0.75
33.3
6.9
5.1
6.5
7.0
19.7
8.1
37.9
51.9
Max
—
1
±100
3.0
16
18
25
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 1mA
µA V_DS = 80V, V_GS = 0V
nA V_GS = 20V, V_DS = 0V
V
VDS = VGS, ID = 250 A
VGS = 10V, ID = 20A
mΩ V_GS = 6.0V, I_D = 20A
VGS = 4.5V, ID = 5A
V
VGS = 0V, IS = 20A
pF
VDS = 50V, VGS = 0V
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC ^{VDD = 50V, ID = 10A,}
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 10A, RG = 6Ω
ns
nC ^{IF = 10A, di/dt = 100A/µs}
POWERDI is a registered trademark of Diodes Incorporated.
DMT10H015LPS
Document number: DS38019 Rev. 4 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated